| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| 758 | ![]() | COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6} |
| 759 | DF | .~> Combined with the removal of material by nonchemical means |
| 760 | DF | .~> Utilizing reflow (e.g., planarization, etc.) |
| 761 | DF | .~> Multiple layers {2} |
| 764 | DF | .~> Formation of semi-insulative polycrystalline silicon |
| 765 | DF | .~> By reaction with substrate {4} |
| 778 | DF | .~> Insulative material deposited upon semiconductive substrate {8} |