US PATENT SUBCLASS 438 / 764
.~ Formation of semi-insulative polycrystalline silicon


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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

758  DF  COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6}
764.~ Formation of semi-insulative polycrystalline silicon


DEFINITION

Classification: 438/764

Formation of semi-insulative polycrystalline silicon:

(under subclass 758) Processes involving the deposition of polycrystalline silicon which possesses an electrical conductivity less than that typically utilized for the formation of electrical devices.

SEE OR SEARCH THIS CLASS, SUBCLASS:

488, for processes of depositing polycrystalline silicon of semiconductive electrical characteristics.

564, for processes of depositing polycrystalline silicon combined with the subsequent diffusion of conductivity modifying dopants therefrom into adjacent semiconductive regions.