| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| 758 | DF | COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6} |
| 765 | | .~ By reaction with substrate {4} |
| 766 | DF | .~.~> Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.) |
| 767 | DF | .~.~> Compound semiconductor substrate |
| 768 | DF | .~.~> Reaction with conductive region |
| 769 | DF | .~.~> Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) {2} |