US PATENT SUBCLASS 438 / 766-- .~.~ Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)

US PATENT SUBCLASS 438 / 766
.~.~ Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)

Current as of: June, 1999
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438 /	HD	SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

758	DF	COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6}
765	DF	.~ By reaction with substrate {4}
766		.~.~ Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)

DEFINITION

Classification: 438/766

Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.):

(under subclass 765) Processes having a step of implanting an ionized species into a substrate region to form or facilitate formation of a reactive coating layer.

SEE OR SEARCH THIS CLASS, SUBCLASS:

423, for a process of forming an electrically isolated lateral semiconductor structure having a step of implanting to form an electrically insulative region.

798, for a process of exposing a semiconductor substrate to ionized radiation for modification of some property of the same.