US PATENT SUBCLASS 438 / 787
.~.~ Silicon oxide formation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

758  DF  COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6}
778  DF  .~ Insulative material deposited upon semiconductive substrate {8}
787.~.~ Silicon oxide formation {2}
788  DF  .~.~.~> Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) {1}
790  DF  .~.~.~> Organic reactant

DEFINITION

Classification: 438/787

Silicon oxide formation:

(under subclass 778) Processes wherein the deposited insulative material is a compound of silicon and oxygen.