US PATENT SUBCLASS 438 / 786
.~.~ Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

758  DF  COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6}
778  DF  .~ Insulative material deposited upon semiconductive substrate {8}
786.~.~ Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)

DEFINITION

Classification: 438/786

Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.):

(under subclass 778) Processes for forming an insulative compound of silicon and two other elements is deposited upon the semiconductor substrate.