US PATENT SUBCLASS 438 / 488
.~ Polycrystalline semiconductor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
488.~ Polycrystalline semiconductor {3}
489  DF  .~.~> Simultaneous single crystal formation
490  DF  .~.~> Running length (e.g., sheet, strip, etc.)
491  DF  .~.~> And subsequent doping of polycrystalline semiconductor

DEFINITION

Classification: 438/488

Polycrystalline semiconductor:

(under subclass 478) Process wherein the deposited semiconductive material is polycrystalline (i.e., possesses

multiple crystalline regions having grain boundaries therebetween).

SEE OR SEARCH THIS CLASS, SUBCLASS:

764, for processes of depositing semi-insulative polycrystalline silicon upon a semiconductive substrate.