US PATENT SUBCLASS 438 / 489
.~.~ Simultaneous single crystal formation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
488  DF  .~ Polycrystalline semiconductor {3}
489.~.~ Simultaneous single crystal formation

DEFINITION

Classification: 438/489

Simultaneous single crystal formation:

(under subclass 488) Process wherein both single and polycrystalline regions are simultaneously formed on the same substrate.