US PATENT SUBCLASS 438 / 478
FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
479  DF  .~> On insulating substrate or layer {2}
482  DF  .~> Amorphous semiconductor {4}
488  DF  .~> Polycrystalline semiconductor {3}
492  DF  .~> Fluid growth step with preceding and subsequent diverse operation
493  DF  .~> Plural fluid growth steps with intervening diverse operation {3}
497  DF  .~> Fluid growth from liquid combined with preceding diverse operation {2}
500  DF  .~> Fluid growth from liquid combined with subsequent diverse operation {2}
503  DF  .~> Fluid growth from gaseous state combined with preceding diverse operation {2}
507  DF  .~> Fluid growth from gaseous state combined with subsequent diverse operation {2}

DEFINITION

Classification: 438/478

FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION, ETC.):

(under the class definition) Process for depositing onto any substrate single or multiple layers of semiconductor material

adapted to serve as an active device region, the semiconductive material being deposited as amorphous, polycrystalline, or single crystalline material.

(1) Note. Included herein are those processes for the fluid growth of semiconductive material having a sufficiently high resistivity so as to be termed semi-insulative. However, if the proximate function of the semiconductive material is as a electrical conductor (e.g., a multilayer inter-connect having a polysilicon layer), classification is excluded fro m this and indented subclasses.

SEE OR SEARCH THIS CLASS, SUBCLASS:

102, for selenium or tellurium elemental semiconductor deposition,

104, for transition metal oxide or copper sulfide compound semiconductor deposition,

105, for diamond semiconductor deposition,

412, for a process of forming laterally spaced isolated semiconductive islands/mesas upon an insulating substrate or layer. 414, for a process of forming laterally spaced junction isolated semiconductive regions.

423, Chemistry of Inorganic Compounds, particularly subclasses 348+ for methods of producing elemental silicon intended as a feedstock for later fabrication into active layers/regions.

584, for a process of coating conductive material onto a semiconductive substrate, or intermediate layers thereupon.

SEE OR SEARCH CLASS

117, Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor, for processes of single crystal growth of semiconductor material upon a seed or substrate and perfecting steps combined therewith.