US PATENT SUBCLASS 438 / 503
.~ Fluid growth from gaseous state combined with preceding diverse operation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
503.~ Fluid growth from gaseous state combined with preceding diverse operation {2}
504  DF  .~.~> Differential etching
505  DF  .~.~> Doping of semiconductor {1}

DEFINITION

Classification: 438/503

Fluid growth from gaseous state combined with preceding diverse operation:

(under subclass 478) Process having a nonfluid growth operation which precedes the fluid growth of semiconductive material from the vapor state and is not merely perfecting thereto.

(1) Note. See Class 117, class definition section I, C, (4) Note, for a detailed description of the types of perfecting prior operations which in combination with a step of single crystal growth are proper therein.