US PATENT SUBCLASS 438 / 507
.~ Fluid growth from gaseous state combined with subsequent diverse operation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
507.~ Fluid growth from gaseous state combined with subsequent diverse operation {2}
508  DF  .~.~> Doping of semiconductor
509  DF  .~.~> Heat treatment

DEFINITION

Classification: 438/507

Fluid growth from gaseous state combined with subsequent diverse operation:

(under subclass 478) Process having a nonfluid growth operation which is subsequent to the fluid growth of semiconductive active region from the gaseous state and is not merely perfecting thereto.

(1) Note. See Class 117, class definition section I, C, (4) Note, for a detailed description of the types of perfecting subsequent operations which in combination with a step of single crystal growth are proper therein.