US PATENT SUBCLASS 438 / 479
.~ On insulating substrate or layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
479.~ On insulating substrate or layer {2}
480  DF  .~.~> Including implantation of ion which reacts with semiconductor substrate to form insulating layer
481  DF  .~.~> Utilizing epitaxial lateral overgrowth

DEFINITION

Classification: 438/479

On insulating substrate or layer:

(under subclass 478) Process wherein the semiconductor layer is deposited onto an electrically insulating substrate or layer.

(1) Note. The formation of a semiconductive active region on an insulative substrate by the chemical reduction of a portion of the insulative substrate thereby altering the

reduced portion of the insulative substrate into a semiconductive region is proper herein.