US PATENT SUBCLASS 438 / 481
.~.~ Utilizing epitaxial lateral overgrowth

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
479  DF  .~ On insulating substrate or layer {2}
481.~.~ Utilizing epitaxial lateral overgrowth

DEFINITION

Classification: 438/481

Utilizing epitaxial lateral overgrowth:

(under subclass 479) Process wherein the semiconductor material is deposited so as to overlay electrically insulative material and such that epitaxial growth occurs laterally from a crystal seeding region.