US PATENT SUBCLASS 438 / 408
.~.~ With electrolytic treatment step

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
404  DF  .~ Total dielectric isolation {7}
408.~.~ With electrolytic treatment step {1}
409  DF  .~.~.~> Porous semiconductor formation

DEFINITION

Classification: 438/408

With electrolytic treatment step:

(under subclass 404) Process for making a total dielectric isolation semiconductor structure including a step of electrochemical treatment of the semiconductor substrate (i.e., such as to affect etching or coating action thereupon).