US PATENT SUBCLASS 438 / FOR 126
.~.~.~.~ Each etching exposes surface of an adjacent layer (156/652.1)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 124  DF  .~.~ Sequential application of etchant material (156/650.1) {1}
FOR 125  DF  .~.~.~ Sequentially etching the same surface of a substrate (156/651.1) {1}
FOR 126.~.~.~.~ Each etching exposes surface of an adjacent layer (156/652.1) {1}
FOR 127  DF  .~.~.~.~.~> Etched layer contains silicon (e.g., oxide, nitride, etc.) (156/653.1)

DEFINITION

Classification: 438/FOR.126

Each etching exposes surface of an adjacent layer:

Foreign art collection for processes wherein a layer or part of a substrate previously covered by a different layer or part of the substrate is exposed by each etching step.