US PATENT SUBCLASS 438 / 581
.~.~ Silicide

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

570  DF  FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT) {4}
580  DF  .~ Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) {1}
581.~.~ Silicide

DEFINITION

Classification: 438/581

Silicide:

(under subclass 580) Processes for forming a contact using the chemical combination of silicon (Si) with one of the platinum group metals (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof).