US PATENT SUBCLASS 438 / 570
FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

570FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT) {4}
571  DF  .~> Combined with formation of ohmic contact to semiconductor region
572  DF  .~> Compound semiconductor {2}
580  DF  .~> Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) {1}
582  DF  .~> Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) {1}

DEFINITION

Classification: 438/570

FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR

RECTIFYING JUNCTION CONTACT):

(under the class definition) Processes for making a metal-to-semiconductor interface that exhibits a nonlinear impedance.

SEE OR SEARCH THIS CLASS, SUBCLASS:

92, for a process of making a Schottky junction which is responsive to electromagnetic radiation.

167, for a process of making a field effect transistor device incorporating a Schottky gate electrode.

534, for a process of implanting a conductivity modifying dopant into semiconductive regions of the substrate combined with the formation of a Schottky electrode.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes), appropriate subclasses, including 54, 73, 260, 280 through 284, 449 through 457, 471 through 486, and 928 for Schottky barrier devices.