US PATENT SUBCLASS 438 / FOR 282
.~.~.~ Preliminary dissolving substrate surface (437/122)


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 279  DF  .~.~ Sliding liquid phase epitaxy (437/119) {5}
FOR 282.~.~.~ Preliminary dissolving substrate surface (437/122)


DEFINITION

Classification: 438/FOR.282

Preliminary dissolving substrate surface:

Foreign art collection for processes wherein the substrate surface is at least partially dissolved before the material is grown or deposited.