US PATENT SUBCLASS 438 / FOR 279
.~.~ Sliding liquid phase epitaxy (437/119)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 279.~.~ Sliding liquid phase epitaxy (437/119) {5}
FOR 280  DF  .~.~.~> Modifying melt composition (437/120)
FOR 281  DF  .~.~.~> Controlling volume or thickness of growth (437/121)
FOR 282  DF  .~.~.~> Preliminary dissolving substrate surface (437/122)
FOR 283  DF  .~.~.~> With nonlinear slide movement (437/123)
FOR 284  DF  .~.~.~> One melt simultaneously contacting plural substrates (437/124)

DEFINITION

Classification: 438/FOR.279

Sliding liquid phase epitaxy:

Foreign art collection for processes wherein the material is deposited by a pool of material moving along and in

continuous contact with a substrate.