| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
| FOR 149 | DF | INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7} |
| FOR 241 | DF | .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25} |
| FOR 286 |  | .~.~ Heteroepitaxy (437/126) {7} |
| FOR 287 | DF | .~.~.~> Multi-color light emitting diode (LED) (437/127) |
| FOR 288 | DF | .~.~.~> Graded composition (437/128) |
| FOR 289 | DF | .~.~.~> Forming laser (437/129) |
| FOR 290 | DF | .~.~.~> By liquid phase epitaxy (437/130) |
| FOR 291 | DF | .~.~.~> Si (Silicon on Ge (Germanium) or Ge (Germanium) on Si (Silicon) (437/131) |
| FOR 292 | DF | .~.~.~> Either Si (Silicon) or Ge (Germanium) layered with or on compound formed from Group III and Group V elements (437/132) |
| FOR 293 | DF | .~.~.~> Compound formed from Group III and Group V elements on diverse Group III and Group V including substituted Group III and Group V compounds (437/133) |