US PATENT SUBCLASS 438 / FOR 321
.~.~.~ Using capping layer over dopant source to prevent outdiffusion of dopant (437/161)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 301  DF  .~ Diffusing a dopant (437/141) {17}
FOR 320  DF  .~.~ From solid dopant source in contact with substrate (437/160) {4}
FOR 321.~.~.~ Using capping layer over dopant source to prevent outdiffusion of dopant (437/161)

DEFINITION

Classification: 438/FOR.321

Using capping layer over dopant source to prevent outdiffusion of dopant:

Foreign art collection for processes using a layer of material to prevent the diffusion of the impurity (located within the device) outside of same.