US PATENT SUBCLASS 438 / FOR 320
.~.~ From solid dopant source in contact with substrate (437/160)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 301  DF  .~ Diffusing a dopant (437/141) {17}
FOR 320.~.~ From solid dopant source in contact with substrate (437/160) {4}
FOR 321  DF  .~.~.~> Using capping layer over dopant source to prevent outdiffusion of dopant (437/161)
FOR 322  DF  .~.~.~> Polycrystalline semiconductor source (437/162)
FOR 323  DF  .~.~.~> Organic source (437/163)
FOR 324  DF  .~.~.~> Glassy source or doped oxide (437/164)

DEFINITION

Classification: 438/FOR.320

From solid dopant source in contact with substrate:

Foreign art collection for processes wherein the impurity is produced by a solid substance which is touching the semiconductor to be doped.