US PATENT SUBCLASS 438 / FOR 293
.~.~.~ Compound formed from Group III and Group V elements on diverse Group III and Group V including substituted Group III and Group V compounds (437/133)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 286  DF  .~.~ Heteroepitaxy (437/126) {7}
FOR 293.~.~.~ Compound formed from Group III and Group V elements on diverse Group III and Group V including substituted Group III and Group V compounds (437/133)

DEFINITION

Classification: 438/FOR.293

Compound formed from Group III and Group V elements on diverse Group III and Group V elements including substituted Group III and Group V compounds:

Foreign art collection for processes for growing a compound formed from Group III, B (Boron), Al (Aluminum), Ga (Gallium), In (Indium), etc. and Group V, N (Nitrogen), S (Sulfur), Se (Selenium), Te (Tellurium), etc. elements on a compound composed of different Group III and Group V elements wherein the elements of the groups may be substituted.