| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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| 142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
| 197 | DF | .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24} |
| 199 | DF | .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11} |
| 200 |  | .~.~.~ And additional electrical device {4} |
| 201 | DF | .~.~.~.~> Including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate) |
| 202 | DF | .~.~.~.~> Including bipolar transistor (i.e., BiCMOS) {5} |
| 209 | DF | .~.~.~.~> Including additional vertical channel insulated gate field effect transistor |
| 210 | DF | .~.~.~.~> Including passive device (e.g., resistor, capacitor, etc.) |