| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| 142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
| 197 | DF | .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24} |
| 199 | DF | .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11} |
| 200 | DF | .~.~.~ And additional electrical device {4} |
| 202 | | .~.~.~.~ Including bipolar transistor (i.e., BiCMOS) {5} |
| 203 | DF | .~.~.~.~.~> Complementary bipolar transistors |
| 204 | DF | .~.~.~.~.~> Lateral bipolar transistor |
| 205 | DF | .~.~.~.~.~> Plural bipolar transistors of differing electrical characteristics |
| 206 | DF | .~.~.~.~.~> Vertical channel insulated gate field effect transistor |
| 207 | DF | .~.~.~.~.~> Including isolation structure {1} |