US PATENT SUBCLASS 438 / 204
.~.~.~.~.~ Lateral bipolar transistor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
200  DF  .~.~.~ And additional electrical device {4}
202  DF  .~.~.~.~ Including bipolar transistor (i.e., BiCMOS) {5}
204.~.~.~.~.~ Lateral bipolar transistor

DEFINITION

Classification: 438/204

Lateral bipolar transistor:

(under subclass 202) Process for making complementary insulated gate field effect transistors additionally having a bipolar transistor possessing a horizontal-type structure so that current flow between its emitter and collector regions is parallel to a major surface of the semiconductor substrate.