US PATENT SUBCLASS 438 / 298
.~.~.~.~ Doping region beneath recessed oxide (e.g., to form chanstop, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
294  DF  .~.~ Including isolation structure {3}
297  DF  .~.~.~ Recessed oxide formed by localized oxidation (i.e., LOCOS) {1}
298.~.~.~.~ Doping region beneath recessed oxide (e.g., to form chanstop, etc.)

DEFINITION

Classification: 438/298

Doping region beneath recessed oxide (e.g., to form chanstop, etc.):

(under subclass 297) Process including a step of introducing electrically active dopant species into the semiconductor substrate region beneath the recessed oxide (e.g., to form a channel stop thereby preventing electric field inversion beneath the recessed oxide, etc.).