(under subclass 400) Process for making an electrically isolated laterally spaced semiconductor structure including a step of implanting a nonelectrically active dopant species to form an insulative region which serves to electrically isolate lateral semiconductive regions.
SEE OR SEARCH THIS CLASS, SUBCLASS:
407, for a process of forming total dielectric isolation with a step of implanting a nondopant ion.
766, for a process of forming a buried insulative region by ion implantation of a nondopant species.
