US PATENT SUBCLASS 438 / FOR 271
.~.~.~ Using preliminary or intermediate metal layer (437/111)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 268  DF  .~.~ Growing single layer in multi-steps (437/108) {4}
FOR 271.~.~.~ Using preliminary or intermediate metal layer (437/111)

DEFINITION

Classification: 438/FOR.271

Using preliminary or intermediate metal layer:

Foreign art collection for processes wherein a first or mid-layer of metal material is provided.