US PATENT SUBCLASS 438 / FOR 258
.~.~.~ Plural dopants simultaneously outdiffusioned (437/98)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 257  DF  .~.~ Forming buried regions with outdiffusion control (437/97) {1}
FOR 258.~.~.~ Plural dopants simultaneously outdiffusioned (437/98)

DEFINITION

Classification: 438/FOR.258

Plural dopants simultaneously outdiffusioned:

Foreign art collection for processes for diffusing from within towards the outside multiple impurities at the same time.