US PATENT SUBCLASS 438 / FOR 257
.~.~ Forming buried regions with outdiffusion control (437/97)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 257.~.~ Forming buried regions with outdiffusion control (437/97) {1}
FOR 258  DF  .~.~.~> Plural dopants simultaneously outdiffusioned (437/98)

DEFINITION

Classification: 438/FOR.257

Forming buried regions with outdiffusion control:

Foreign art collection for processes for making subsurface areas while regulating the diffusion from within towards the outside.