US PATENT SUBCLASS 438 / FOR 344
.~ Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound (437/184)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 340  DF  MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13}
FOR 344.~ Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound (437/184)

DEFINITION

Classification: 438/FOR.344

Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound:

Foreign art collection for processes wherein the contact is placed on a base material made from Group III, B (Boron), Al (Aluminum), Ga (Gallium), In (Indium), etc., and Group V, N (Nitrogen), P (Phosphorus), As (Arsenic), Sb (Antimony), Bi (Bismuth), etc., elements in the form of compounds which function as semiconductors.