US PATENT SUBCLASS 438 / 589
.~.~ Recessed into semiconductor substrate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
585  DF  .~ Insulated gate formation {7}
589.~.~ Recessed into semiconductor substrate

DEFINITION

Classification: 438/589

Recessed into semiconductor substrate:

(under subclass 585) Processes wherein the insulated gate electrode is recessed below the main surface of the semiconductor substrate.