US PATENT SUBCLASS 438 / 585
.~ Insulated gate formation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
585.~ Insulated gate formation {7}
586  DF  .~.~> Combined with formation of ohmic contact to semiconductor region
587  DF  .~.~> Forming array of gate electrodes {1}
589  DF  .~.~> Recessed into semiconductor substrate
590  DF  .~.~> Compound semiconductor
591  DF  .~.~> Gate insulator structure constructed of plural layers or nonsilicon containing compound
592  DF  .~.~> Possessing plural conductive layers (e.g., polycide) {1}
595  DF  .~.~> Having sidewall structure {1}

DEFINITION

Classification: 438/585

Insulated gate formation:

(under subclass 584) Processes for forming an electrode which is electrically insulated from the adjoining semiconductor regions and which upon application of a voltage thereto exerts a change in electrical behavior in the adjoining semiconductor region.