US PATENT SUBCLASS 438 / 591
.~.~ Gate insulator structure constructed of plural layers or nonsilicon containing compound

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
585  DF  .~ Insulated gate formation {7}
591.~.~ Gate insulator structure constructed of plural layers or nonsilicon containing compound

DEFINITION

Classification: 438/591

Gate insulator structure constructed of plural layers or nonsilicon containing compound:

(under subclass 585) Processes wherein the gate insulator is a laminate of multiple dielectric layers or is a nonsilicon containing dielectric compound.