US PATENT SUBCLASS 438 / 283
.~.~ Plural gate electrodes (e.g., dual gate, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
283.~.~ Plural gate electrodes (e.g., dual gate, etc.)

DEFINITION

Classification: 438/283

Plural gate electrodes (e.g., dual gate, etc.):

(under subclass 197) Process for making an insulated gate field effect transistor wherein plural gate electrodes on either the same or opposite side of the active channel region serve to control the electrical conduction characteristics of the semiconductive active channel region.

SEE OR SEARCH THIS CLASS, SUBCLASS:

157, for a process of making an insulated gate field effect transistor upon an insulating substrate or layer wherein the transistor possesses dual gate or opposed gate structure.