US PATENT SUBCLASS 438 / 711
.~.~.~.~ Utilizing multiple gas energizing means

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
710  DF  .~.~.~ By creating electric field (e.g., plasma, glow discharge, etc.) {17}
711.~.~.~.~ Utilizing multiple gas energizing means

DEFINITION

Classification: 438/711

Utilizing multiple gas energizing means:

(under subclass 710) Processes wherein plural gas energizing means are utilized either simultaneously or consecutively to ionize the etching gas (e.g., RF discharge and a DC electron source, etc.)