US PATENT SUBCLASS 438 / 9
.~.~.~ Plasma etching

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

5  DF  INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION {3}
7  DF  .~ Optical characteristic sensed {1}
8  DF  .~.~ Chemical etching {1}
9.~.~.~ Plasma etching

DEFINITION

Classification: 438/9

Plasma etching:

(under subclass 8) Process wherein the chemical etching step utilizes an ionized chemically reactive gas to etch the

semiconductor substrate.