US PATENT SUBCLASS 438 / 258
.~.~.~ Including additional field effect transistor (e.g., sense or access transistor, etc.)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
257  DF  .~.~ Having additional gate electrode surrounded by dielectric (i.e., floating gate) {8}
258.~.~.~ Including additional field effect transistor (e.g., sense or access transistor, etc.)

DEFINITION

Classification: 438/258

Including additional field effect transistor (e.g., sense or access transistor, etc.):

(under subclass 257) Process for making a floating gate-type insulated gate field effect transistor having combined therewith an additional field effect transistor.

SEE OR SEARCH THIS CLASS, SUBCLASS:

241, for a process of making an insulated gate field effect transistor combined with a capacitor which structure contains an additional insulated gate field effect transistor.