US PATENT SUBCLASS 438 / FOR 217
.~.~.~.~ Complementary metal oxide having diverse conductivity source and drain regions (437/57)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 211  DF  .~ Making assemblies of plural individual devices having community feature, e.g., integrated circuit, electrical connection, etc. (437/51) {3}
FOR 214  DF  .~.~ Diverse types (437/54) {4}
FOR 216  DF  .~.~.~ Plural field effect transistors (CMOS) (437/56) {2}
FOR 217.~.~.~.~ Complementary metal oxide having diverse conductivity source and drain regions (437/57)

DEFINITION

Classification: 438/FOR.217

Complimentary metal oxide having diverse conductivity source and drain regions: (437/57)

Foreign art collection for subject matter wherein complementary metal oxide semiconductor field effect transistors have source and drain regions of opposite conductivity.