US PATENT SUBCLASS 438 / FOR 106
.~.~.~.~ Delamination subsequent to etching (156/631.1)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 104  DF  .~.~ With uniting of preforms (e.g., laminating, etc.) (156/629.1) {2}
FOR 105  DF  .~.~.~ Prior to etching (156/630.1) {2}
FOR 106.~.~.~.~ Delamination subsequent to etching (156/631.1)

DEFINITION

Classification: 438/FOR.106

Delamination subsequent to etching:

Foreign art collection for processes wherein a preform is detached from another preform by destruction of the bond therebetween subsequent to a step of etching.