US PATENT SUBCLASS 438 / 286
.~.~ Asymmetric

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
286.~.~ Asymmetric

DEFINITION

Classification: 438/286

Asymmetric:

(under subclass 197) Process for making an insulated gate field effect transistor wherein the pair of active regions are offset or nonsymmetrical with respect to the centerline of the insulated gate electrode.