US PATENT SUBCLASS 438 / FOR 112
.~.~ With relative movement between the substrate and a confined pool of etchant (156/637.1)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 112.~.~ With relative movement between the substrate and a confined pool of etchant (156/637.1) {2}
FOR 113  DF  .~.~.~> With removal of adhered reaction product from substrate (156/638.1)
FOR 114  DF  .~.~.~> With substrate rotation, repeated dipping, or advanced movement (156/639.1)

DEFINITION

Classification: 438/FOR.112

With relative movement between the substrate and a confined pool of etchant:

Foreign art collection for processes including the step of causing a relative motion between a substrate being etched and an etchant which is confined by a container and wherein the substrate being etched may serve as the container.