US PATENT SUBCLASS 438 / 386
.~ Trench capacitor


Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use



438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

381  DF  MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) {4}
386.~ Trench capacitor {3}
387  DF  .~.~> Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
388  DF  .~.~> With epitaxial layer formed over the trench
389  DF  .~.~> Including doping of trench surfaces {3}


DEFINITION

Classification: 438/386

Trench capacitor:

(under subclass 381) Process for making a capacitor located in a groove in a semiconductive substrate.