US PATENT SUBCLASS 438 / 389
.~.~ Including doping of trench surfaces

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

381  DF  MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) {4}
386  DF  .~ Trench capacitor {3}
389.~.~ Including doping of trench surfaces {3}
390  DF  .~.~.~> Multiple doping steps
391  DF  .~.~.~> Including isolation means formed in trench
392  DF  .~.~.~> Doping by outdiffusion from a dopant source layer (e.g., doped oxide)

DEFINITION

Classification: 438/389

Including doping of trench surfaces:

(under subclass 386) Process for making a trench capacitor having a step of introducing electrically active dopant species into a surface (i.e., sidewall or bottom) of the trench in which the capacitor is located.

SEE OR SEARCH THIS CLASS, SUBCLASS:

524, for a process of implanting a dopant into a grooved semiconductive region.