US PATENT SUBCLASS 438 / 392
.~.~.~ Doping by outdiffusion from a dopant source layer (e.g., doped oxide)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

381  DF  MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) {4}
386  DF  .~ Trench capacitor {3}
389  DF  .~.~ Including doping of trench surfaces {3}
392.~.~.~ Doping by outdiffusion from a dopant source layer (e.g., doped oxide)

DEFINITION

Classification: 438/392

Doping by outdiffusion from a dopant source layer (e.g., doped oxide):

(under subclass 389) Process for making a trench capacitor wherein the trench surfaces are doped via outdiffusion from a doped source layer.