US PATENT SUBCLASS 438 / 387
.~.~ Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

381  DF  MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) {4}
386  DF  .~ Trench capacitor {3}
387.~.~ Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)

DEFINITION

Classification: 438/387

Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.):

(under subclass 386) Process wherein the trench capacitor contains a number of capacitor plate regions aligned vertically above each other.