US PATENT SUBCLASS 438 / FOR 244
.~.~ Growing single crystal on single crystal insulator (SOS) (437/84)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 244.~.~ Growing single crystal on single crystal insulator (SOS) (437/84)

DEFINITION

Classification: 438/FOR.244

Growing single crystal on single crystal insulator (SOS):

Foreign art collection for processes for growing only one crystalline material on only one other crystalline material, the latter being a poor electrical conductor.