US PATENT SUBCLASS 438 / 236
.~.~.~ Lateral bipolar transistor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
234  DF  .~.~ Including bipolar transistor (i.e., BiMOS) {2}
236.~.~.~ Lateral bipolar transistor

DEFINITION

Classification: 438/236

Lateral bipolar transistor:

(under subclass 234) Process for making an insulated gate field effect transistor combined with a bipolar transistor which has a horizontal-type structure resulting in current flow between its emitter and collector regions parallel to a major surface of the semiconductor substrate.