US PATENT SUBCLASS 438 / 194
.~.~ Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
186  DF  .~ Having junction gate (e.g., JFET, SIT, etc.) {9}
194.~.~ Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)

DEFINITION

Classification: 438/194

Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.):

(under subclass 186) Process for making a junction gate field effect transistor having a step of introducing an electrically active dopant species into the semiconductor channel region beneath the gate electrode.

(1) Note. To be proper herein, the transistor channel region must possess semiconductive characteristics prior to the introduction of the dopant.